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po wer ma nage m ent & m ulti m ark et sic silicon carbide diode final da ta s heet rev. 2 . 0 , 201 5 - 0 4 - 13 5 th ge ner ation thin q! tm 650v sic schottky diode idw 24 g65c5 b
1) j - std20 and jesd22 2) all devices tested under avalanche conditions for a time periode of 10ms 3) per leg 4) per device final datasheet 2 rev. 2.0 , 2015 - 04 - 13 1 description features ? revolutionary semiconductor material - silicon carbide ? benchmark s witching beh avior ? no reverse recovery/ no forward recovery ? temperature independent switching behavior ? high surge current capability ? pb - free lead plating; rohs compliant ? qualified according to jedec 1) for target applications ? breakdown voltage tested at 9 ma 2) 3) ? optimized for high temperature operation benefits ? system efficiency improvement over si diodes ? system cost / size savings due to reduced cooling requirements ? enabling higher frequency / increased power density solutions ? higher system reliability due to lower operating temperatures ? reduced emi applications ? switch mode power supply ? power factor correction ? solar invert er ? uninterruptible power supply table 1 key performance parameters 4) parameter value unit v dc 650 v q c ; v r =400v 2 x 18 nc e c ; v r =400v 2 x 4.1 j i f @ t c < 1 25 c 2 x 12 a table 2 pin definition pin 1 pin 2 pin 3 a c a type / ordering code package marking rel a ted links idw 24 g65c5 b pg - to247 - 3 d24 65 b 5 www.infineon.com/sic i dw 24 g65c5 b 5 th generation thinq!? sic schottky diode thinq!? generation 5 represents infineon leading edge technology for the sic the new thinq!? generation 5 has been designed to complement our 650v coolmos? families: this ensures meeting the most stringent application 1 2 3
5 th generation thinq! tm sic schottky diode idw 24 g65c5 b table of contents final datasheet 3 rev. 2.0 , 2015 - 04 - 13 13 table of contents 1 description ................................ ................................ ................................ ................................ .......... 2 2 maximum ratings ................................ ................................ ................................ ................................ 4 3 thermal characteristics ................................ ................................ ................................ ..................... 4 4 electrical characteristics ................................ ................................ ................................ ................... 5 5 electrical characteristics diagrams ................................ ................................ ................................ .. 6 6 simplified forward characteristics model ................................ ................................ ...................... 8 7 package outlines ................................ ................................ ................................ ................................ 9 8 revision history ................................ ................................ ................................ ............................... 10
5 th generation thinq! tm sic schottky diode idw 24 g65c5 b maximum ratings 1) per leg 2) per device final datasheet 4 rev. 2.0 , 2015 - 04 - 13 2 maximum ratings table 3 maximum ratings parameter symbol values unit note/test condition min. typ. max. continuous forward current 1) i f C C 12 a t c < 125 c, d=1 surge non - repetitive forward current, sine halfwave 1) i f ,sm C C 71 t c = 25c, t p =10 ms C C 56 t c = 150c, t p =10 ms non - repetitive peak forward current 1) i f ,max C C 505 t c = 2 5 c, t p =10 s i2t value 1) i2dt C C 25.4 a2s t c = 25c, t p =10 ms C C 15.7 t c = 150c, t p =10 ms repetitive peak reverse voltage v rrm C C 650 v t j = 25c diode dv/dt ruggedness dv/dt C C 100 v/ns v r =0..480 v power dissipation 2) p tot C C 152 w t c = 25c operating and storage temperature t j ;t stg - 55 C 175 c mounting torque C 50 7 0 ncm m 3 screws 3 thermal characteristics table 4 thermal characteristics to - 247 - 3 parameter symbol values unit note/test condition min. typ. max. thermal resistance, junction - case 1) r thjc C 1 . 5 2 . 0 k/w thermal resistance, junction - ambient 1) r thja C C 62 leaded soldering temperature, wavesoldering only allowed at leads t sold C C 260 c 1.6mm (0.063 in.) from case for 10 s
5 th generation thinq! tm sic schottky diode idw 24 g65c5 b electrical characteristics 1) per leg 2) per device final datasheet 5 rev. 2.0 , 2015 - 04 - 13 4 electrical characteristics table 5 static characteristics parameter symbol values unit note/test condition min. typ. max. dc blocking voltage 1) v dc 650 C C v t j =25c diode forward voltage 1) v f C 1.5 1. 7 i f = 12 a, t j =25c C 1.8 2. 1 i f = 12 a, t j =150c reverse current 1) i r C 0.6 190 a v r =650 v, t j =25c C 0. 2 68 v r =600 v, t j =25c C 2.4 1350 v r =650 v, t j =150c table 6 ac characteristics parameter symbol values unit note/test condition min. typ. max. total capacitive charge 1) q c C 18 nc v r =400 v, di/dt =200a/ s, i f i f,max , t j =150c total capacitance 1) c C 360 C pf v r =1 v, f =1 mhz C 4 7 C v r =300 v, f =1 mhz C 4 6 C v r =600 v, f =1 mhz
5 th generation thinq! tm sic schottky diode idw 24 g65c5 b electrical characteristics diagrams 1) per leg 2) per device final datasheet 6 rev. 2.0 , 2015 - 04 - 13 5 electrical characteristics diagrams table 7 p ower dissipation 1) maximal d iode forward current 1) p tot =f( t c ) ; r thjc ,max i f =f( t c ) ; r thjc ,max ; t j 175c ; parameter d =duty cycle table 8 typical forward characteristic s 1) typical forward characteristic s in surge current 1) i f =f( v f ) ; t p = 2 00 s; parameter: t j i f =f( v f ) ; t p =2 00 s; parameter: t j - 55 c 175c 150c 25c 100c - 55 c 25c 100c 150c 175c 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 175 p tot [w] t c [ c] 0 10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175 i f [a] t c [ c] 0.1 0.3 0.5 0.7 1 0 5 10 15 20 25 0 1 2 3 i f [a] v f [v] 0 20 40 60 80 100 120 0 1 2 3 4 5 6 i f [a] v f [v]
5 th generation thinq! tm sic schottky diode idw 24 g65c5 b electrical characteristics diagrams 1) per leg 2) per device final datasheet 7 rev. 2.0 , 2015 - 04 - 13 table 9 typ. capacitance charge vs. current slope 1) typ. reverse current vs. reverse voltage 1) q c =f( di f /dt); t j = 150c; v r =400 v; i f i f,max i r =f( v r ); parameter: t j table 10 max . transient thermal impedance 1) typ. capacitance vs. reverse voltage 1) z th,jc =f( t p ) ; parameter: d= t p / t c= f( v r ); t j =25 c; f =1 mhz - 55 c 175c 150c 25c 100c 0 2 4 6 8 10 12 14 16 18 20 100 300 500 700 900 q c [nc] d i f /dt [a/s] 1.e - 9 1.e - 8 1.e - 7 1.e - 6 1.e - 5 100 200 300 400 500 600 i r [a] v r [v] 0.01 0.1 1 1.e - 06 1.e - 03 1.e+00 z th,jc [k/w] t p [s] 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0 50 100 150 200 250 300 350 400 450 500 0 1 10 100 1000 c [pf] v r [v]
5 th generation thinq! tm sic schottky diode idw 24 g65c5 b electrical characteristics diagrams 1) per leg 2) per device final datasheet 8 rev. 2.0 , 2015 - 04 - 13 table 11 typ. capacitance stored energy 1) e c =f( v r ) 6 simplified forward characteristics model table 12 equivalent forward current curve 1) mathematical equation v f =f( i f ) t j in c; - 55c < t j < 175c; i f < 24 a 1/r diff v th 0 2 4 6 8 10 12 0 200 400 600 e c [j] v r [v] i f [a] v f [v] ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.039 10 .07 1 10 .07 1 v 04 . 1 001 . 0 4 - 2 6 - j j j diff j j th t t t r t t v f diff th f i r v v ? ? ?
5 th generation thinq! tm sic schottky diode id w 24 g65c5 b 1) per leg 2) per device final datasheet 9 rev. 2.0 , 2015 - 04 - 13 package outlines figure 1 outlines to - 247 , dimensions in mm/inches
5 th generation thinq! tm sic schottky diode idw 24 g65c5 b revision history we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com edition 201 5 - 04 - 13 published by infineon technologies ag 81726 munich, germany ? 201 5 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non - infringement of intellectual property rights of any third party. information for further information on techn ology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for i nformation on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life - support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the heal th of the user or other persons may be endangered. final datasheet 10 rev. 2.0 , 2015 - 04 - 13 7 revision history 5 th gener a tion thinq! tm sic schottky diode revision history : 201 5 - 0 4 - 13 , rev. 2 . 0 previous revision: revision subjects (major changes since last version) 2.0 release of the final datasheet.
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